One of the Applications of Aluminum Nitride in the Semiconductor Field - As a Ceramic Packaging Substrate

With the vigorous development of microelectronics and semiconductor technology, motors and electronic components have gradually entered an era of miniaturization, light weight, high energy density and high power output. The heat flux density of electronic substrates has increased significantly, and maintaining a stable operating environment inside the equipment has become a key technical issue that needs focus. AlN ceramics are regarded as ideal materials for the new generation of heat dissipation substrates and electronic device packaging due to their characteristics such as high thermal conductivity, thermal expansion coefficient close to that of silicon, high mechanical strength, good chemical stability and environmental friendliness and non-toxicity. Among them, applications centered on AlN Ceramic Substrate are particularly widespread. Its raw material is derived from high-quality Aluminum Nitride Powder, and relying on the core advantage of High Thermal Conductivity AlN, it has become a key supporting material for semiconductor thermal management.

Compared with Al₂O₃ ceramic substrates and Si₃N₄ ceramic substrates, AlN Ceramic Substrate has these advantages: Using AlN Ceramic Substrate as the carrier of the chip can isolate the chip from the module heat dissipation base plate. The AlN ceramic layer in the middle of the substrate can effectively improve the insulation capacity of the module (the withstand voltage > 2.5KV). Moreover, AlN Ceramic Substrate has good thermal conductivity. Relying on the characteristics of High Thermal Conductivity AlN, the thermal conductivity can reach 170–260 W/(m·K), which perfectly meets the core demand of Aluminum Nitride Thermal Management. It is widely used in the packaging of AlN Semiconductor Components, especially suitable for the application scenario of AlN Substrate for IGBT, providing reliable heat dissipation and insulation guarantee for power semiconductor devices.

In addition, with a thermal expansion coefficient of ~4.2 × 10⁻⁶ K⁻¹, AlN Ceramic Substrate closely matches that of silicon (~4.0 × 10⁻⁶ K⁻¹), thereby avoiding stress damage to the chip during thermal cycling. AlN Ceramic Substrate exhibits peel strength > 20 N/cm, excellent mechanical properties, corrosion resistance, dimensional stability, and wide temperature range capability. This further highlights the advantages of High Thermal Conductivity AlN materials, leveraging the premium characteristics of Aluminum Nitride Powder to provide a solid foundation for the long-term stable operation of AlN Semiconductor Components and promoting continuous advancement in Aluminum Nitride Thermal Management technology.

Xiamen Juci manufactures Aluminum Nitride ceramic substrates, Aluminum Nitride powder, and related products. Please contact us if you have any requirements.

Contact: 

Jenny Qin / 진현혜 

Phone: +86 151-5177-8700

Wechat ID: JENNY-8866

Xiamen Juci Technology Co., Ltd.

Email: qinxianhui@chinajuci.com

Website: www.jucialnglobal.com